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GT8G132
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G132
Strobe Flash Applications
Unit: mm * * * * * Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 6 8 8 150 1.1 150 -55~150 2 Unit V V
Collector current Collector power dissipation Junction temperature Storage temperature range
A W C C
JEDEC JEITA TOSHIBA
2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch x 1.5 t] Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Weight: 0.080 g (typ.)
Equivalent Circuit
8 7 6 5
1
2
3
4
These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/s.
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GT8G132
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = 6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 150 A, VGE = 4 V VCE = 10 V, VGE = 0, f = 1 MHz 4V 0 2.0 51 Min 0.6 Typ. 2.3 2800 1.0 1.1 1.6 2.2 Max 10 10 1.2 7.0 Unit A A V V pF

300 V

s
VIN: tr < 100 ns = tf < 100 ns = Duty cycle < 1% =
114 C/W
Note 2: Drive operation: Mount on glass epoxy board [1 inch x 1.5 t]
Marking
GT8G132
Type Lot No. on lower left of the marking indicates Pin 1.
Weekly code: (Three digits)
Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
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GT8G132
IC - VCE
200 4.0 160 5.0 120 4.5 3.5 VGE = 2.5 V 3.0 160 5.0 120 4.5 200
IC - VCE
4.0 3.5 3.0
(A)
Collector current IC
Collector current IC
(A)
VGE = 2.5 V 80
80
40 Common emitter Tc = -40C 0 0 1 2 3 4 5
40 Common emitter Tc = 25C 0 0 1 2 3 4 5
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
IC - VCE
200 4.0 160 5.0 120 VGE = 2.5 V 80 4.5 3.0 3.5 160 5.0 120 200
IC - VCE
4.0 4.5 3.0 3.5
(A)
Collector current IC
Collector current IC
(A)
80
VGE = 2.5 V
40 Common emitter Tc = 70C 0 0 1 2 3 4 5
40 Common emitter Tc = 125C 0 0 1 2 3 4 5
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
IC - VGE
200 3 25 70
VCE (sat) - Tc
IC = 150 A 2.5 120 2 90 1.5 60
(A)
160 Tc =- 40C 120 125
80
Collector-emitter saturation voltage VCE (sat) (V)
Collector current IC
1 0.5 Common emitter VGE = 4 V -40 0 40 80 120 160
40 Common emitter VCE = 5 V 0 0 1 2 3 4 5
0 -80
Gate-emitter voltage
VGE (V)
Case temperature Tc (C)
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GT8G132
VCE - VGE
5 5
VCE - VGE
VCE (V)
Common emitter Tc = 25C 4 120 3 IC = 150 A
VCE (V)
Common emitter Tc = -40C 4 IC = 150 A
Collector-emitter voltage
3 90 2
120
Collector-emitter voltage
90
2
1
60
60 1
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Gate-emitter voltage
VGE (V)
Gate-emitter voltage
VGE (V)
VCE - VGE
5 5
VCE - VGE
VCE (V)
Common emitter Tc = 125C 4 120 3 90 2 IC = 150 A
VCE (V)
Common emitter Tc = 70C 4
IC = 150 A
Collector-emitter voltage
3 90 2 60 1
Collector-emitter voltage
120
1
60
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Gate-emitter voltage
VGE (V)
Gate-emitter voltage
VGE (V)
VGE (OFF) - Tc
(V)
1.4 1.2 Common emitter VCE = 5 V IC = 1 mA 10000
C - VCE
Gate-emitter cut-off voltage VGE (OFF)
Cies
1 0.8 0.6
(pF) Capacitance C
1000
100 Cres
Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25C 10 100 1000
0.4 0.2 0 -80
-40
0
40
80
120
160
10
1
Case temperature Tc (C)
Collector-emitter voltage
VCE (V)
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GT8G132
Switching Time - RG
10 500
VCE, VGE - QG
10
VCE (V)
toff
400
8
Switching time (s)
tf
ton
Collector-emitter voltage
1
200
VGE
4
tr
Common emitter VCE = 300 V VGE = 4 V IC = 150 A Tc = 25C
Common emitter 100 VCE 0 0 20 40 VCC = 300 V RL = 2.0 Tc = 25C 60
2
0.1
1
10
100
1000
0 80
Gate resistance
RG ()
Gate charge QG (nC)
Switching Time - ICP
10 800
Maximum Operating Area
toff
Main capacitance CM (F)
600
Switching time (s)
tf 1
ton
400
Common emitter tr VCC = 300 V VGE = 4 V RG = 51 Tc = 25C 100 150 200
200
VCM = 350 V Tc < 70C = VGE = 4.0 V 10 < RG < 300 = =
0.1
0
50
0
0
40
80
120
160
200
Collector current IC
(A)
Peak collector current
ICP
(A)
Minimum Gate Drive Area
200
ICP (A)
160
Peak collector current
Tc = 25C 120 70
80
40
0
0
2
4
6
8
Gate-emitter voltage
VGE (V)
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Gate-emitter voltage
300
6
VGE (V)
GT8G132
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-02

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